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IRF7807VD2PbF
For the synchronous MOSFET Q2, R ds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q oss and re-
verse recovery charge Q rr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V in . As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage of
this new technology platform is that the MOSFETs it
produces are suitable for both control FET and synchro-
nous FET applications. This has been demonstrated with
the 3.3V and 5V converters. (Fig 3 and Fig 4). In these
applications the same MOSFET IRF7807V was used for
both the control FET (Q1) and the synchronous FET
(Q2). This provides a highly effective cost/performance
solution.
3.3V Supply : Q1=Q2= IRF7807V
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the MOSFET on, resulting in shoot-through current .
The ratio of Q gd /Q gs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807V can be downloaded in
machine readable format at www.irf.com.
Figure 2: Q oss Characteristic
5.0V Supply : Q1=Q2= IRF7807V
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Vin=24V
Vin=14V
Vin=10V
90
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Vin=24V
Vin=14V
Vin=10V
1
2
3
Load current (A)
4
5
1
2
3
Load current (A)
4
5
4
Figure 3
Figure 4
www.irf.com
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IRF7807VTR
功能描述:MOSFET N-CH 30V 8.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7807VTRPBF
功能描述:MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC
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IRF7807Z
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IRF7807ZHR
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IRF7807ZPBF
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IRF7807ZTR
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IRF7807ZTRPBF
功能描述:MOSFET MOSFT 30V 11A 13.8mOhm 7.2nC
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